Dr. Susan Trolier-McKinstry
Penn State
RESCHEDULED
12:00 Noon
Room 120 – Meyerhoff Chemistry Building
Host: Dr. Joe Bennett
“Ferroelectric Thin Films for Three Dimensional Non-volatile Memory”
This talk will discuss new families of ferroelectric materials available for integration with CMOS electronics. These new materials, including Hf1-xZrxO2, Al1-xScxN, Al1-xBxN and Zn1-xMgxO, offer the possibility of enabling 3D non-von Neumann computer architectures exploiting ferroelectrics for local memory, logic in memory, digital/analog computation, and neuromorphic functionality. This approach circumvents the end of Moore’s law in 2D scaling, while simultaneously overcoming the “von Neumann bottleneck” in moving instructions and data between separate logic and memory circuits. Computing accounts for 5 – 15% of worldwide energy consumption. While recent efficiency gains in hardware have partially mitigated the rising energy consumption of computing, major gains are achievable in a paradigm shift to 3D computing systems, especially those that closely couple memory and logic. The materials science of the deposition, ferroelectric wake-up, switching, and reliability science will be covered.